Semiconductor device having voltage sensing element

Details Semiconductor device having voltage sensing element Semiconductor device having voltage sensing element

1994-11-17

1996-03-19

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Tunneling pn junction device

In three or more terminal device

257106, 257481, 257551, 257603, A01L 29861, A01L 31107

Patent

active

055005411

ABSTRACT:
A semiconductor device having a voltage sensing element is disclosed which allows reduction of power consumption in comparison with a conventional device and enables to obtain a sufficient output voltage to secure sensing accuracy even when an input voltage is small. In the voltage sensing element of the semiconductor device, an n.sup.- layer is formed on a front surface of a p.sup.- substrate. A p type diffused region and an n type diffused region are formed at a main surface of n.sup.- layer, spaced apart by a prescribed distance. An electrode is formed on p type diffused region, and an electrode is formed on n type diffused region. An electrode is formed on a rear surface of p.sup.- substrate. P.sup.- substrate and n.sup.- layer constitute a diode in a reversely biased state. As a result, power consumption is reduced in comparison with a conventional voltage dividing resistor circuit.

REFERENCES:
patent: 4211941 (1980-07-01), Schade, Jr.

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