Semiconductor device having voltage sensing element

Details Semiconductor device having voltage sensing element Semiconductor device having voltage sensing element

1996-11-04

1998-03-10

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

327583, 327504, 327 80, 327565, H03K 5153

Patent

active

057265984

ABSTRACT:
A semiconductor device having a voltage sensing element is disclosed which allows reduction of power consumption in comparison with a conventional device and enables to obtain a sufficient output voltage to secure sensing accuracy even when an input voltage is small. In the voltage sensing element of the semiconductor device, an n.sup.- layer is formed on a front surface of a p.sup.- substrate. A p type diffused region and an n type diffused region are formed at a main surface of n.sup.- layer, spaced apart by a prescribed distance. An electrode is formed on p type diffused region, and an electrode is formed on n type diffused region. An electrode is formed on a rear surface of p.sup.- substrate. P.sup.- substrate and n.sup.- layer constitute a diode in a reversely biased state. As a result, power consumption is reduced in comparison with a conventional voltage dividing resistor circuit.

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patent: 4810907 (1989-03-01), Tohyama
patent: 4926068 (1990-05-01), Fujita
patent: 5329190 (1994-07-01), Igarashi et al.
patent: 5467050 (1995-11-01), Clapp, III et al.

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