Semiconductor device having various threshold voltages and manuf

Details Semiconductor device having various threshold voltages and manuf Semiconductor device having various threshold voltages and manuf

1994-08-25

1996-12-03

Thomas, Tom

Fishing, trapping, and vermin destroying

437 27, 437 34, 437 45, 437 56, 437 57, H01L 218238

Patent

active

055808050

ABSTRACT:
An impurity for adjusting a threshold voltage is ion-implanted using, as masks, a resist for forming P.sup.- -type diffusion layers, a resist for forming N.sup.+ -type diffusion layers and N-type diffusion layers and a resist for forming P.sup.+ -type diffusion layers and N-type diffusion layers. For this reason, a semiconductor device including first to third N-channel transistors and first and second P-channel transistors, all of which respectively have different threshold voltages, can be manufactured without using an additional resist except for the above resists. Therefore, an operating margin at a low voltage can be improved and data retention characteristics can be improved in a memory without causing an increase in cost, an increase in power consumption and the like.

REFERENCES:
patent: 4753898 (1988-06-01), Parrillo et al.
patent: 4845047 (1989-06-01), Holloway et al.

Affiliated with

Also associated with

Rating

Semiconductor device having various threshold voltages and manuf does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having various threshold voltages and manuf, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having various threshold voltages and manuf will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-785098