Semiconductor device having two transistors forming a memory cel

Details Semiconductor device having two transistors forming a memory cel Semiconductor device having two transistors forming a memory cel

1992-10-02

1994-02-15

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257324, 257336, 257368, 257396, 257506, H01L 2968

Patent

active

052869989

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate and having a first source diffusion region, a first drain diffusion region and a first gate electrode, a second transistor formed on the semiconductor substrate adjacent to the first transistor and having a second source diffusion region, a second drain diffusion region and a second gate electrode, a field oxide layer formed on the semiconductor substrate for isolating the first and second transistors, a first insulator layer which covers a surface of the semiconductor substrate including a surface of the first transistor but excluding a surface of the second transistor, where the first insulator layer has a side wall portion, and a second insulator layer formed at the side wall portion of the first insulator layer and a side wall portion of the second gate electrode of the second transistor.

REFERENCES:
patent: 4808544 (1989-02-01), Matsui
patent: 4873557 (1989-10-01), Kita
patent: 4894696 (1990-01-01), Takeda et al.

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