Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Patent
1998-07-07
2000-09-19
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
257786, 257780, 257773, 257734, 257203, 257207, H01L 2348
Patent
active
061216909
ABSTRACT:
In order to solve the aforementioned problems, a semiconductor device according to the present invention comprises a semiconductor chip, a plurality of first electrode pads respectively placed along a peripheral edge portion of the semiconductor chip and having first and second transverse ends, and a plurality of second electrode pads respectively having transverse ends near from center lines of the semiconductor chip, the transverse ends being respectively placed at the same distances from the center lines as the first transverse ends of the first electrode pads along the peripheral edge portion of the semiconductor chip, and having widths broader than those of the first electrode pads.
The width of each second electrode pad is formed to 1.5 to 2 times as long as that of each first electrode pad.
Wires for electrically connecting the first and second electrode pads and leads are formed so as to be bonded at substantially the same intervals.
The heights of the wires are formed so as to be substantially identical to each other.
REFERENCES:
patent: 5468999 (1995-11-01), Lin et al.
patent: 5569964 (1996-10-01), Ikebe
Kohara Youichi
Yamada Shigeru
Crane Sara
OKI Electric Industry Co., Ltd.
Thai Luan
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