Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1977-08-16
1980-01-08
Larkins, William D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 21, 357 23, 357 27, 357 33, 357 34, 357 57, 357 58, H01L 2712
Patent
active
041829654
ABSTRACT:
A semiconductor device is disclosed in which an intrinsic or weakly doped semiconductor layer is arranged on a substrate. The semiconductor layer contains a first P doped zone and a first N doped zone which are separated by a portion of the said intrinsic layer serving as base zone. The semiconductor layer further contains a second P doped zone and a second N doped zone which are also separated from one another by the base zone. The four doped zones are arranged such that a connecting line between the second P doped zone and second N doped zone intersects a connecting line between the first P doped zone and the first N doped zone preferably at right angles. A sub-diode formed of the first doped zones affects the operation of a sub-diode formed by the second doped zones.
REFERENCES:
patent: 3324297 (1967-06-01), Stieltjes et al.
patent: 3686684 (1972-08-01), Matsushita et al.
patent: 3710206 (1973-01-01), Matsushita
patent: 3731123 (1973-05-01), Matsushita
patent: 3840888 (1974-10-01), Gaensslen et al.
Larkins William D.
Siemens Aktiengesellschaft
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