Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-11-21
2006-11-21
Mai, Anh Duy (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S072000
Reexamination Certificate
active
07138657
ABSTRACT:
A semiconductor device comprises a first insulating film provided over a substrate and heat-treated, a second insulating film provided over the first insulating film, and a semiconductor film provided over the second insulating film, the second insulating film and the semiconductor film being formed successively without exposing them to the atmosphere.
REFERENCES:
patent: 4918504 (1990-04-01), Kato et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5047360 (1991-09-01), Nicholas
patent: 5130264 (1992-07-01), Troxell et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5198377 (1993-03-01), Kato et al.
patent: 5317433 (1994-05-01), Miyawaki et al.
patent: 5583369 (1996-12-01), Yamazaki et al.
patent: 5633182 (1997-05-01), Miyawaki et al.
patent: 5696386 (1997-12-01), Yamazaki
patent: 5773331 (1998-06-01), Solomon et al.
patent: 5821559 (1998-10-01), Yamazaki et al.
patent: 5834797 (1998-11-01), Yamanaka
patent: 5888858 (1999-03-01), Yamazaki et al.
patent: 5894151 (1999-04-01), Yamazaki et al.
patent: 5923963 (1999-07-01), Yamanaka
patent: 5946561 (1999-08-01), Yamazaki et al.
patent: 5985740 (1999-11-01), Yamazaki et al.
patent: 6004831 (1999-12-01), Yamazaki et al.
patent: 6100954 (2000-08-01), Kim et al.
patent: 6150241 (2000-11-01), Deleonibus
patent: 6177302 (2001-01-01), Yamazaki et al.
patent: 6261877 (2001-07-01), Yamazaki et al.
patent: 2002/0006705 (2002-01-01), Suzawa et al.
patent: 2004/0175873 (2004-09-01), Yamazaki et al.
patent: 0485233 (1992-05-01), None
patent: 0 545 694 (1993-06-01), None
patent: 0 862 201 (1998-09-01), None
patent: 63-31108 (1988-02-01), None
patent: 06-296023 (1994-10-01), None
patent: 8-330602 (1996-12-01), None
patent: 9-116156 (1997-05-01), None
patent: 9-148582 (1997-06-01), None
patent: 9-312260 (1997-12-01), None
J.H Lan et al., Planarized Copper Gate Hydrogenated Amorphous-Silicon Thin-Film Transistors for AM-LCDs. Device Research Conference Digest, 1998. 56th Annual, pp. 130-131.
S.H Won et al., Hdrogenated Amorphous Silicon Thin-Film Transistor on Plastic With an Organic Gate Insulator. IEEE 2004, pp. 132-134.
U.S. Appl. No. 08/223,823, filed Apr. 6, 1994; “Thin Film Transistors Having Anodized Metal Films Between the Gate Wiring and Drain Wiring” Shunpei Yamazaki et al.
“Dictionary of Scientific and Technical Terms,” McGraw-Hill, Inc., Fifth Edition, 1994, p. 541.
Costellia Jeffrey L.
Duy Mai Anh
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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