Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-10-18
1997-03-04
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257133, 257139, 257146, 257147, 257149, 257155, H01L 2974, H01L 31111
Patent
active
056082380
ABSTRACT:
A semiconductor device and a method for operating the same includes a first P-type semiconductor layer and a first N-type semiconductor layer provided thereon. A plurality of second P-type semiconductor layers and a plurality of third P-type semiconductor layers are formed on the surface of the first N-type semiconductor layer. A plurality of second N-type semiconductor layers are formed on their respective surfaces of the third P-type semiconductor layers. Emitter electrodes are provided on the second P-type semiconductor layers and second N-type semiconductor layers. A plurality of first gate electrodes is each provided above the first N-type semiconductor layer between the adjacent third P-type semiconductor layers. A plurality of second gate electrodes are each provided above the first N-type semi-conductor layer between the second P-type semiconductor layer and the third P-type semiconductor layer. A collector electrode is provided under the first P-type semiconductor layer. If the timing at which a bias is applied to the first gate electrodes and second gate electrodes is controlled, an operation mode in which the device serves as a thyristor and an operation mode in which the device serves as an IGBT can be switched to each other. Therefore, the semiconductor device, which can be turned on/turned off, is capable of being turned off at high speed when an on-state voltage is low.
REFERENCES:
patent: 5281833 (1994-01-01), Ueno
patent: 5286981 (1994-02-01), Lilja et al.
IEEE, from Proceeding of Power Electronics Specialists Conference, Tetsujiro Tsunoda, et al., "Improved 600V and 1200V IGBT with Low Turn-off Loss and High Ruggedness", pp. 66-73, Jun. 10-15, 1990.
IEEE Ch2987-6l/91/0000-0138, M. Nandakumar, et al., "The Base Resistance Controlled Thyristor (BRT) A New MOS Gated Power Thyristor", pp. 138-141, 1991.
I.E.E.E. Transactions on Electron Devices, vol. 34, No. 5, May 1987, pp. 1170-1176, W. Seifert, et al., "An Fet-Driven Power Thyristor".
Kabushiki Kaisha Toshiba
Loke Steven H.
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