Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1998-09-29
1999-11-16
Williams, Alexander Oscar
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257691, 257500, 257501, 257786, 257207, 257208, H01L 2348, H01L 2704, H01L 2350, G01R 3128
Patent
active
059863455
ABSTRACT:
A semiconductor device includes first through fourth pads and first through third external connection leads with the first external connection lead being a ground connection lead and the first and second pads being ground pads. First through fourth connection wires selectively connect the pads to the external connection leads. Additionally, a first ground line is connected to the first pad, a second ground line is connected to the second pad, a first protective diode connects the first ground line to the third pad, and a second protective diode connects the second ground line to the fourth pad. The first external connection lead is connected to the first pad via the first connection wire and to the second pad via the second connection wire, the third connection wire connects the third pad to the second external connection lead, and the fourth connection wire connects the fourth pad to the third external connection lead. In one preferred embodiment, the semiconductor device also includes first and second current generators and detectors coupled between the first and second pads and between the first and third pads, respectively. A comparator coupled to the first and second detectors outputs a signal whose level depends on the difference between the outputs of the two detectors.
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European Patent Abstract of Japanese Publication No. 63164353, published Jul. 7, 1988.
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French Search Report dated Jun. 8, 1998 with annex on French Application No. 97-12066.
STMicroelectronics S. A.
Williams Alexander Oscar
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