Semiconductor device having two distinct sioch layers

Details Semiconductor device having two distinct sioch layers Semiconductor device having two distinct sioch layers

2006-11-07

2006-11-07

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S635000, C257S642000, C257S774000

Reexamination Certificate

active

07132732

ABSTRACT:
A semiconductor device has a semiconductor substrate, and a multi-layered wiring arrangement provided thereon. The multi-layered wring arrangement includes at least one insulating layer structure having a metal wiring pattern formed therein. The insulating layer structure includes a first SiOCH layer, a second SiOCH layer formed on the first SiOCH layer, and a silicon dioxide (SiO2) layer formed on the second SiOCH layer. The second SiOCH layer features a carbon (C) density lower than that of the first SiOCH layer, a hydrogen (H) density lower than that of the first SiOCH layer, and an oxygen (O) density higher than that of the first SiOCH layer.

REFERENCES:
patent: 6514855 (2003-02-01), Suzuki et al.
patent: 6559520 (2003-05-01), Matsuki et al.
patent: 6593251 (2003-07-01), Baklanov et al.
patent: 6852651 (2005-02-01), Shioya et al.
patent: 6890869 (2005-05-01), Chung
patent: 2002-026121 (2002-01-01), None
patent: 2003-017561 (2003-01-01), None

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