Semiconductor device having two different active elements whose

Details Semiconductor device having two different active elements whose Semiconductor device having two different active elements whose

1989-09-14

1991-07-09

Mintel, William

357 46, 357 34, 357 234, H01L 2702

Patent

active

050310208

ABSTRACT:
A semiconductor device according to the present invention comprises a P-channel MOSFET having a gate, a source, and a drain, and a bipolar transistor having a collector, a base, and an emitter. The semiconductor device also includes an N.sup.- -type collector diffusion layer formed in an epitaxial layer on a P-type semiconductor substrate and adjacent to an N.sup.+ -type buried collector diffusion layer, and an N.sup.+ -type electrode lead-out region formed in contact with the N.sup.+ -type buried collector diffusion layer having an impurity concentration higher than the N.sup.- -type collector layer. A gate electrode section constituted by a gate oxide film and a gate electrode is formed on the N.sup.- -type collector layer and the N.sup.+ -type electrode lead-out region, and an P-type impurity is ion-implanted into the source region of the P-channel MOSFET and and an N-type impurity is doped into the emitter region of the bipolar transistor, with the gate electrode section being used as a mask. Furthermore, a P-type impurity is ion-implanted into a common area of the drain region of the P-channel MOSFET and the base region of the bipolar transistor and is diffused into the common area to a preset depth. Thus, the semiconductor device of bipolar-CMOS structure having a drain and base as the common area can be obtained.

REFERENCES:
patent: 4825274 (1989-04-01), Higuchi et al.
patent: 4868135 (1989-09-01), Ogura et al.
patent: 4907059 (1990-03-01), Kobayashi et al.
Ogura et al, "Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor", IEEE Journal of Solid-State Circuits, vol. SC-14, No. 4, Aug. 1980, pp. 424-432.
Parrillo et al., "Disposable Polysilicon LDD Spacer Technology", IEEE Transactions on Electron Devices, vol. 38, No. 1, Jan. 1991, pp. 39-46.
Japanese Patent Disclosure (Kokai) 52-26181, filed Aug. 22, 1975.
Japanese Patent Disclosure (Koki) 59-161059, filed Mar. 3, 1983.

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