Semiconductor device having two composite field effect transisto

Details Semiconductor device having two composite field effect transisto Semiconductor device having two composite field effect transisto

1997-07-07

1999-03-23

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257287, 257341, H01L 2980

Patent

active

058863729

ABSTRACT:
It is an object of the present invention to provide a semiconductor device that is able to have the same Vp in all FETs formed on one chip.
A semiconductor device of the present invention comprises a semiconductor substrate having a first region and a second region on a main surface; a first field effect transistor formed on the first region of the main surface, the first field effect transistor having first gates arranged in a plurality of rows and having a first total gate width, the first gates respectively establishing a first gate length and a first gate width; and a second field effect transistor formed on the second region of the main surface, the second field effect transistor having second gates arranged a plurality of rows and having a second total gate width smaller than the first total gate width, the second gates respectively establishing a second gate length substantially the same as the first gate length and a second gate width substantially the same as the first gate width.

REFERENCES:
patent: 4837530 (1989-06-01), Kondoh
patent: 5633517 (1997-05-01), Saitoh

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