Semiconductor device having two annular electrodes

Details Semiconductor device having two annular electrodes Semiconductor device having two annular electrodes

1975-01-20

1976-12-28

Wojciechowicz, Edward J.

357 53, 357 55, 357 56, 357 68, H01L 2934, H01L 2940, H01L 2906, H01L 2348

Patent

active

040005070

ABSTRACT:
In a semiconductor device wherein an insulating film is provided on that surface of a semiconductor substrate to which a base-collector junction extends, two annular electrodes are formed with the junction formed therebetween. One of the electrodes is maintained at base potential, while the other electrode is maintained at collector potential. Thus, moisture or like contaminants adhering to the insulating film are prevented from leading to the generation of excessive channel current.

REFERENCES:
patent: 3405329 (1968-10-01), Loro et al.
patent: 3713908 (1973-01-01), Agusta et al.

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