Semiconductor device having trench structures and method

Details Semiconductor device having trench structures and method Semiconductor device having trench structures and method

2007-06-27

2008-09-02

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With polycrystalline semiconductor isolation region in...

C257S507000, C257S520000, C257SE29018, C257SE29020

Reexamination Certificate

active

07420258

ABSTRACT:
In one embodiment, a pair of sidewall passivated trench contacts is formed in a substrate to provide electrical contact to a sub-surface feature. A doped region is diffused between the pair of sidewall passivated trenches to provide low resistance contacts.

REFERENCES:
patent: 6798037 (2004-09-01), Leonardi

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