Semiconductor device having trench capacitor and manufacturing m

Details Semiconductor device having trench capacitor and manufacturing m Semiconductor device having trench capacitor and manufacturing m

1988-06-27

1990-04-17

Hille, Rolf

357 55, 357 41, H01L 2978, H01L 2906, H01L 2702

Patent

active

049185004

ABSTRACT:
A semiconductor memory device comprises a semiconductor substrate having a trench, first polysilicon serving as a charge storage region formed through an insulating film in an inner portion of the trench, and second polysilicon serving as a capacitor electrode formed through an insulating film inside of the first polysilicon, the charge storage regions being connected to a transfer gate in the upper end of the concave portion so that information charges are transferred.

REFERENCES:
patent: 4786954 (1988-11-01), Morie et al.
M. Taguchi et al., "Dielectrically Encapsulated Trench Capacitor Cell", IEDM 86, (1986).
S. Nakajima et al., "An Isolation-Merged Vertical Capacitor Cell for Large Capacity Dram", IEDM 84 (1984).
P. Chatterjee et al., "Trench and Compact Structures for dRAMS", International Electron Device Meeting (1986).

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