Semiconductor device having transistor with high...

Details Semiconductor device having transistor with high... Semiconductor device having transistor with high...

2004-03-15

2008-07-29

Leja, Ronald W (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

C361S111000

Reexamination Certificate

active

07405913

ABSTRACT:
A semiconductor device in includes a transistor and a surge absorption element such as Zener diode, that are formed on the same substrate and connected in parallel. The surge absorption element has a resistance during breakdown operation that is smaller than the resistance of the surge absorption element during breakdown operation of the transistor. In addition, the secondary breakdown current of the surge absorption element is larger than the secondary breakdown current of the transistor. Upon application of a high ESD voltage and high surge voltage, the energy of the ESD and surge is absorbed by operation of the surge absorption element and is limited to a voltage equal to or less than the breakdown voltage of the transistor, which would otherwise be destroyed.

REFERENCES:
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patent: 6365932 (2002-04-01), Kouno et al.
patent: 6469353 (2002-10-01), Amerasekera et al.
patent: 6977425 (2005-12-01), Yoshida et al.
patent: 3-49257 (1991-03-01), None

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