Semiconductor device having thyristor structure

Details Semiconductor device having thyristor structure Semiconductor device having thyristor structure

1993-05-28

1994-09-20

Ngo, Ngan Van

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257132, 257146, 257154, 257162, 257167, 257169, 257170, 257378, 257380, H01L 2974, H01L 2702

Patent

active

053492129

ABSTRACT:
A channel in which electron current is supplied from n.sup.+ type source layer to an n.sup.- type base layer is formed in a thyristor portion by using a first gate electrode to have an electrical connection in a thyristor state. Injection of hole current to a p type base layer, which is necessary to maintain the thyristor state is extracted to a source terminal by a control MOSFET portion including a second gate electrode a turn-off time and the state of this device is changed to the transistor state similar to that in the IGBT so that a short switching time turn-off is realized.

REFERENCES:
patent: 4779125 (1988-10-01), Remmerie et al.
patent: 4786958 (1988-11-01), Bhagat
patent: 4914496 (1990-04-01), Nakagawa et al.
patent: 5182220 (1993-01-01), Ker et al.
patent: 5245202 (1993-09-01), Yasukazu

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