Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Reexamination Certificate
2007-02-02
2009-12-15
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
C257S676000, C257S692000
Reexamination Certificate
active
07633141
ABSTRACT:
The stackable semiconductor device includes at least one first electrode on a top side and a large-area second electrode on an underside of a semiconductor chip. The semiconductor chip also includes a control electrode on one of: the top side or the underside. Through contact blocks are arranged on the edge sides of the semiconductor device, the through contact blocks including externally accessible external contact areas. The external contact area each includes at least one edge side contact area, a top side contact area and an underside contact area. At least one large-area external contact is arranged on the underside and/or on the top side of the semiconductor device.
REFERENCES:
patent: 5115300 (1992-05-01), Yanagida et al.
patent: 6165820 (2000-12-01), Pace
patent: 6249041 (2001-06-01), Kasem et al.
patent: 6873041 (2005-03-01), Crowley et al.
patent: 6979843 (2005-12-01), Nakajima et al.
patent: 2004/0089934 (2004-05-01), Shimoida et al.
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
Vu Hung
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