Semiconductor device having thin film wiring layer of aluminum c

Details Semiconductor device having thin film wiring layer of aluminum c Semiconductor device having thin film wiring layer of aluminum c

1991-07-31

1992-09-15

Hille, Rolf

Fishing, trapping, and vermin destroying

357 60, 357 71, 437194, 437197, 437957, H01L 2348

Patent

active

051482592

ABSTRACT:
A semiconductor device comprises one or a plurality of thin film wiring layers made of aluminum containing carbon, so as to obtain hillock-free wiring layers. A method of forming the thin film wiring layer employs a plasma-enhanced chemical vapor deposition or a magnetron-plasma chemical vapor deposition to form the thin film wiring layer.

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