Semiconductor device having T-shaped gate structure...

Details Semiconductor device having T-shaped gate structure... Semiconductor device having T-shaped gate structure...

2006-12-12

2006-12-12

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S574000

Reexamination Certificate

active

07148145

ABSTRACT:
Polysilicon lines are formed, featuring an upper portion extending beyond the lower portion that defines the required CD. Accordingly, metal silicide layers of increased dimensions can be formed on the upper portion of the polysilicon lines so that the resulting gate structures exhibit a very low final sheet resistance. Moreover, in situ sidewall spacers are realized during the process for forming the polysilicon lines and without additional steps and/or costs.

REFERENCES:
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patent: 6057576 (2000-05-01), Hsia et al.
patent: 6284613 (2001-09-01), Subrahmanyam
patent: 6395606 (2002-05-01), Huster et al.
patent: 6593618 (2003-07-01), Kamata et al.
patent: 0 991 113 (2000-04-01), None
Wolf et al., Silicon Processing for the VLSI Era, 1986, Lattice Press, vol. 1, pp. 124, 175, 182-183, 384-386, 389-390, 398-399, 407-408.

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