Semiconductor device having T-shaped gate electrode

Details Semiconductor device having T-shaped gate electrode Semiconductor device having T-shaped gate electrode

1997-07-25

2000-06-13

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257281, 257282, 257283, 257284, 257449, 257471, 257472, 257473, H01L 21203

Patent

active

060752629

ABSTRACT:
A compound semiconductor transistor has a structure in which a first insulating film is formed only under a overhang of a gate electrode an upper part of which is formed widely, and a second insulating film for threshold voltage adjustment is formed on the side of a gate electrode and the first insulating film.

REFERENCES:
patent: 4839304 (1989-06-01), Morikawa
patent: 4843024 (1989-06-01), Ito
patent: 4859618 (1989-08-01), Shikata et al.
patent: 4978629 (1990-12-01), Komori et al.
patent: 5445977 (1995-08-01), Fujimoto
patent: 5484740 (1996-01-01), Cho
patent: 5496748 (1996-03-01), Hattori et al.

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