Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Patent
1995-08-25
1997-05-06
Callahan, Timothy P.
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
327407, 327530, 327535, 327525, 327545, 365226, G05F 302
Patent
active
056274939
ABSTRACT:
The semiconductor device comprises: an internal supply voltage deboosting circuit for inputting an external supply voltage, deboosting the inputted external supply voltage, and outputting a deboosted voltage as an internal supply voltage; a first control circuit for deactivating the internal supply voltage deboosting circuit when the external supply voltage is lower than a predetermined value; and a second control circuit for outputting the external supply voltage as the internal supply voltage when the external supply voltage is lower than the predetermined value. When the external supply voltage is lower than a predetermined value, since the internal supply voltage deboosting circuit is deactivated by the first control circuit, the current consumption can be reduced. Further, since the external supply voltage is outputted as the internal supply voltage by the second control circuit, the deboosting operation is not required. The device is usable for different external supply voltages in spite of the same circuit configuration, while preventing the operational margin from being deteriorated.
REFERENCES:
patent: 4223277 (1980-09-01), Taylor et al.
patent: 4593203 (1986-06-01), Iwahashi et al.
patent: 4833341 (1989-05-01), Watanabe et al.
patent: 4837520 (1989-06-01), Golke et al.
patent: 5045772 (1991-09-01), Nishiwaki et al.
patent: 5175451 (1992-12-01), Ihara
patent: 5184031 (1993-02-01), Hayakawa et al.
patent: 5329178 (1994-07-01), Burton
patent: 5349559 (1994-09-01), Park et al.
patent: 5396113 (1995-03-01), Park et al.
S. Koshimaru et al., "Low Power and High-Speed 4M Bit DRAM Family with Self-Refresh Mode," NEC Technical Report, vol. 45, No. 8, pp. 57-61, Aug. 1992.
Koyanagi Masaru
Takeuchi Yoshiaki
Tanaka Hiroaki
Callahan Timothy P.
Kabushiki Kaisha Toshiba
Le Dinh T.
LandOfFree
Semiconductor device having supply voltage deboosting circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having supply voltage deboosting circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having supply voltage deboosting circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2135170