Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2008-01-08
2008-01-08
Toledo, Fernando L. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S110000, C257S341000, C257SE29005, C257SE21361
Reexamination Certificate
active
11211524
ABSTRACT:
A semiconductor device includes: a center region; a periphery region; and a semiconductor layer including pairs of a first region having a first impurity amount and a second region having a second impurity amount. The first and the second regions are alternately aligned in a plane. The periphery region includes an utmost outer and an utmost inner periphery pairs. The utmost outer periphery pair has a difference between the second and the first impurity amounts, which is smaller than a maximum difference in the periphery region. The utmost inner periphery pair has a difference between the second and the first impurity amounts, which is larger than a difference in the center region.
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Hattori Yoshiyuki
Makino Tomoatsu
Okada Kyoko
Yamaguchi Hitoshi
DENSO CORPORATION
Jefferson Quovaunda
Posz Law Group , PLC
Toledo Fernando L.
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