Semiconductor device having super junction MOS transistor...

Details Semiconductor device having super junction MOS transistor... Semiconductor device having super junction MOS transistor...

2011-04-19

2011-04-19

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S263000, C257S328000, C257S329000, C257SE27022, C257SE27096, C257SE29257

Reexamination Certificate

active

07928470

ABSTRACT:
A semiconductor device having a super junction MOS transistor includes: a semiconductor substrate; a first semiconductor layer on the substrate; a second semiconductor layer on the first semiconductor layer; a channel forming region on a first surface portion of the second semiconductor layer; a source region on a first surface portion of the channel forming region; a source contact region on a second surface portion of the channel forming region; a gate electrode on a third surface portion of the channel forming region; a source electrode on the source region and the source contact region; a drain electrode on a backside of the substrate; and an anode electrode on a second surface portion of the second semiconductor layer. The anode electrode provides a Schottky barrier diode.

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