Semiconductor device having substrate with differentially...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond

Reexamination Certificate

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C257SE23021, C257S780000, C257S781000, C257S786000, C438S612000

Reexamination Certificate

active

07851928

ABSTRACT:
A semiconductor device having an insulating substrate with differentially plated metal and selective solder. Chip221with contact studs223is attached onto the traces203on tape101. The traces, which are unprotected by soldermask110, have solder on the top surface, but not on the sidewalls. The sidewalls of the traces are at right angles to the trace top, giving the trace a rectangular cross section. Consequently, the area for attaching stud223is maximized. At the same time, the differential plating method of trace metal203and through-hole metal206allows different metal thicknesses and provides independent control of the trace aspect ratio for low electrical resistance and trace fatigue.

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