Semiconductor device having structures to reduce stress notching

Details Semiconductor device having structures to reduce stress notching Semiconductor device having structures to reduce stress notching

1992-02-18

1994-05-31

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

257798, H01L 2188

Patent

active

053171853

ABSTRACT:
A semiconductor device has structures to reduced stress notching effects in conductive lines. In one form, the semiconductor device includes a semiconductor die which has a plurality of active conductive lines thereon. The plurality of conductive lines collectively has a first and a second outside edge. In close proximity to each of the first and the second outside edges is a stress reducing line. Each of the stress reducing lines is a non-active structure (in other words does not transmit signals) and functions to reduce stress concentrations on the plurality of active conductive lines which are imposed by overlying insulating and passivation layers. As a result of weakened stress concentrations, the amount of stress notching in the active conductive lines is reduced.

REFERENCES:
patent: 4288829 (1981-09-01), Tango
patent: 4510678 (1985-04-01), Eggers
Bartush et al, "Double dielectric process for multilevel metal", IBM TDB, vol. 22, No. 4, Sep. 79, pp. 1442-1445.
"The Influence of Stress on Aluminum Conductor Life", by T. Turner et al, The Proceedings of the IEEE International Reliability Physics Symposium, 1985, pp. 142-147.
"Line Width Dependence of Stresses in Aluminum Interconnect", by R. Jones, The Proceedings of IEEE International Reliability Physics Symposium, 1987, pp. 9-14.

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