Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With thin active central semiconductor portion surrounded by...
Patent
1997-12-22
2000-07-18
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With thin active central semiconductor portion surrounded by...
257618, 257730, 257752, 438689, 438690, 438691, 438692, H01L 2906, H01L 21302, H01L 21461
Patent
active
060911301
ABSTRACT:
A convex portion is formed along the edge of a semiconductor substrate to surround a chip region on the main surface side of the semiconductor substrate. For example, the convex portion is formed part of the semiconductor substrate. The height of the convex portion is set to approximately the same height as the surface of an insulating film attained after the end of the CMP (chemical mechanical polishing) process effected for the insulating film. The width the of the convex portion is set smaller than the width from the edge of the semiconductor substrate to a position in front of the chip region. The semiconductor substrate is attached to a carrier and the CMP process is effected by use of a polishing pad and a slurry. At the time of CMP, since a local heavy load occurring in the edge portion of the semiconductor substrate is applied only to the convex portion, the wafer edge over-polishing will not occur.
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Murota Masayuki
Oyamatsu Hisato
Fenty Jesse A.
Hardy David
Kabushiki Kaisha Toshiba
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