Semiconductor device having strained superlattice buffer layers

Details Semiconductor device having strained superlattice buffer layers Semiconductor device having strained superlattice buffer layers

1986-08-13

1989-05-30

Clawson, Jr., Joseph E.

357 16, 357 63, H01L 2712

Patent

active

048355836

ABSTRACT:
An epitaxial crystal grown layer structure which permits, on an In-doped GaAs substrate, which will be industrially used in large quantities, the growth of an epitaxial layer having the same good quality as the epitaxial layer grown on an undoped GaAs substrate.

REFERENCES:
patent: 4205329 (1980-05-01), Dingle et al.
patent: 4697202 (1987-09-01), Sher
G. Osbourn et al., "A GaAs.sub.x P.sub.1-x /GaP Strained-Layer Superlattice", Appl. Phys. Lett., vol. 41, #2, Jul. 15, 1982, pp. 172-174.
M. Ludowise et al., "Cont. 300-K Laser Operation of Strained Superlattices", Appl. Phys. Lett., vol. 42, #6, Mar. 15, 1983, pp. 487-489.
T. Zipperian et al., "InGaAs/GaAs, Strained-Layer Superlattice (SLS) . . . ", Proc. IEDM, Dec. 1984, pp. 524-527.
T. Zipperian et al., "Strained-Quantum-Well Modulation-Doped FET", Electronics Letters, vol. 21, #18, Aug. 29, 1985, pp. 823-824.
G. Osbourn et al., "A GaAs.sub.x P.sub.1-x /GaP Strained-Layer Superlattice", Appl. Phys.

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