Semiconductor device having stable breakdown voltage in wiring a

Details Semiconductor device having stable breakdown voltage in wiring a Semiconductor device having stable breakdown voltage in wiring a

1993-07-02

1994-10-11

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257138, 257140, H01L 2970, H01L 2972

Patent

active

053550030

ABSTRACT:
In order to obtain a semiconductor device which can suppress a surge voltage and a method of fabricating the same, a thickness (d4-d5) and impurity concentration of an N.sup.- -type layer (4) provided under a P-type base region (5) are so set as to reliably prevent a depletion layer extending from a P-N junction formed in the interface between the P-type base region (5) and the N.sup.- -type layer 4 from reaching an N.sup.+ -type buffer layer 2 in a turn-off time. Thus, it is possible to suppress a surge voltage caused in an actual operation.

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