Semiconductor device having SOI construction

Details Semiconductor device having SOI construction Semiconductor device having SOI construction

2006-09-12

2006-09-12

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S350000

Reexamination Certificate

active

07105910

ABSTRACT:
A semiconductor device includes: a semiconductor substrate including a first semiconductor layer, an insulation layer and a second semiconductor layer, which are laminated in this order; a trench penetrating both of the second semiconductor layer and the insulation layer and reaching the first semiconductor layer; and a third semiconductor layer. The trench has a ring shape on a principal surface of the substrate so that a part of the second semiconductor layer and a part of the insulation layer are surrounded with the trench. The third semiconductor layer is disposed in the trench through a first insulation film disposed on a sidewall of the trench so that the third semiconductor layer contacts the first semiconductor layer at a bottom of the trench.

REFERENCES:
patent: 5442223 (1995-08-01), Fujii
patent: 6057588 (2000-05-01), Yamazaki
patent: 6303954 (2001-10-01), Ohoka
patent: 6429486 (2002-08-01), Abe et al.
patent: 6661076 (2003-12-01), Toeda et al.
patent: 6667518 (2003-12-01), Christensen et al.
patent: 2004/0061163 (2004-04-01), Nakayama
patent: A-5-190874 (1993-07-01), None
patent: A-8-088332 (1996-04-01), None
patent: A-10-144894 (1998-05-01), None
patent: 2003045988 (2003-02-01), None
patent: A-2003-045988 (2003-02-01), None
patent: 2003347488 (2003-12-01), None
patent: A-2003-347488 (2003-12-01), None

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