Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-03-15
2005-03-15
Tran, Minh Loan (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S347000, C257S349000, C257S411000, C257S751000
Reexamination Certificate
active
06867432
ABSTRACT:
In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into the active layer. A thin film comprising SiOxNyformed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiOxNy. Also, a thin film comprising SiOxNyis formed under the active layer. The active layer includes a metal element at a concentration of 1×1015to 1×1019cm−3and hydrogen at a concentration of 2×1019to 5×1021cm−3.
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Ferguson, Jr. Gerald J.
Robinson Eric J.
Sixbey, Friedman, Leedom & Ferguson, PC
Tran Minh Loan
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