Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1998-02-05
1999-04-13
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257347, 257349, 257411, 257751, H01L 2976
Patent
active
058941380
ABSTRACT:
In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into the active layer. A thin film comprising SiO.sub.x N.sub.y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO.sub.x N.sub.y. Also, a thin film comprising SiO.sub.x N.sub.y is formed under the active layer. The active layer includes a metal element at a concentration of 1.times.10.sup.15 to 1.times.10.sup.19 cm.sup.-3 and hydrogen at a concentration of 2.times.10.sup.19 to 5.times.10.sup.21 cm.sup.-3.
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Ferguson Jr. Gerald J.
Robinson Eric J.
Tran Minh Loan
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