Semiconductor device having silicon oxynitride film with improve

Details Semiconductor device having silicon oxynitride film with improve Semiconductor device having silicon oxynitride film with improve

1987-09-08

1990-03-06

James, Andrew J.

357 52, 357 73, H01L 2934

Patent

active

049070649

ABSTRACT:
Disclosed herein is a semiconductor device having an aluminum wiring formed on a semiconductor substrate and a silicon oxynitride film covering the aluminum wiring and having Si, N, O as main elements, atomic ratio of the three elements being expressed by Si.sub.x N.sub.y O.sub.z (where x+y+z=1.00), a range of the atomic ratio lying on lines interconnecting the following eight points in a Si-N-O ternary system or lying inside a region bounded by these lines;

REFERENCES:
patent: 3629088 (1971-12-01), Frank et al.
patent: 4091406 (1978-05-01), Lewis
patent: 4097889 (1978-06-01), Kern et al.
patent: 4581622 (1986-04-01), Takasaki et al.
patent: 4621277 (1986-11-01), Ito et al.

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