Semiconductor device having silicon-on-insulator structure

Details Semiconductor device having silicon-on-insulator structure Semiconductor device having silicon-on-insulator structure

1992-11-12

1993-10-05

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257510, 257513, 257374, 257635, H01L 2712

Patent

active

052508366

ABSTRACT:
A semiconductor device includes a first substrate made of a semiconductor, a first insulator layer which is formed on the first substrate, second substrate made of a semiconductor and formed on the first insulator layer, a trench which extends from a top surface of the second substrate to at least a part of the first insulator layer, and a second insulator layer which substantially defines a side wall of the trench.

REFERENCES:
patent: 4261791 (1981-04-01), Shwartzman
patent: 4870475 (1989-09-01), Endo et al.
patent: 4907063 (1990-03-01), Okada et al.
patent: 4951102 (1990-08-01), Beitman et al.
Dielectrically Isolated Intelligent Power Switch, Yu Ohata and Takao Izumita, Proceedings of the IEEE 1987 Custom Integrated Circuits Conference, May 4-7, 1987, pp. 443-446.
Process He: A Highly Advanced Trench Isolated Bipolar Technology for Analogue and digital Applications, P. C. Hunt and M. P. Cooke, IEEE 1988 Custom Integrated Circuits Conference, May 16-19, 1988, pp. 22.2.1-22.2.4.
Suitable Trench Shape for Dielectric Isolation, K. D. Beyer, B. M. Kemlage and D. J. Schepis, IBM Technical Disclosure Bulletin, vol. 27, No. 5, Oct., 1984, pp. 3068-3070.
The Use of Multiple Oxygen Implants for Fabrication of Bipolar Silicon-On-Insulator Integrated Circuits, Dale G. Platteter, Tom F. Cheek, Jr., IEEE Trans. on Nuclear Science (1988) Dec., vol. 35, No. 6, pp. 1350-1354.
Improvements of Trench Capacitor Characteristics by Pre-Oxidation Surface Cleaning with a HNO.sub.3 -HF-H.sub.2 O Solution, A. Ohsawa, R. Takizawa, K. Honda, T. Matsutani and K. Imaoka, International Electron Devices Meeting (IEEE 1988), Dec. 11-14, 1988, pp. 726-729.
Acid Mixture for Cleaning Wafers with Already Existing Circuit Structures M. Briska and K. P. Thiel, IBM Technical Disclosure Bulletin, vol. 18, No. 8, Jan., 1976, p. 2553.
Method of Reducing the Arsenic Doping in Silicon, W. Hoffmeister, A. Schmitt and H. Schumacher, IBM Technical Disclosure Bulletin, vol. 22, No. 8A, Jan., 1980, p. 3255.
Patent Abstracts of Japan, vol. 6, No. 47 (E-99) (925) 26 Mar. 1982 JP-A-56 161 638 (Fujitsu K.K.) 12 Dec. 1981.
Patent Abstracts of Japan, vol. 12, No. 189 (E-616) (3036) 2 Jun. 1988 JP-A-62 293 759 (Matsushita Electric Ind Co Ltd) 21 Dec. 1987.

Affiliated with

Also associated with

Rating

Semiconductor device having silicon-on-insulator structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having silicon-on-insulator structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having silicon-on-insulator structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1006699