Semiconductor device having silicon nitride film and silicon...

Details Semiconductor device having silicon nitride film and silicon... Semiconductor device having silicon nitride film and silicon...

2005-01-11

2005-01-11

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S635000, C257S640000, C257S649000

Reexamination Certificate

active

06841850

ABSTRACT:
A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.

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patent: 20020001917 (2002-01-01), Park
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patent: 2994616 (1999-10-01), None
patent: 2000-349082 (2000-12-01), None

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