Semiconductor device having shield structure

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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C257SE21546

Reexamination Certificate

active

07923809

ABSTRACT:
A semiconductor device comprises a semiconductor substrate; a diffusion layer formed on the semiconductor substrate; at least two wiring layers formed opposite to each other over the semiconductor substrate; signal lines for transmitting a signal maintaining a predetermined voltage, each of the signal lines being formed in each of the two wiring layers; shield lines fixed to a constant voltage to shield the signal lines, each of the shield lines being formed adjacent to each of the signal lines in the two wiring layers; and a gate electrode formed over the semiconductor substrate via an insulation film. In the semiconductor device, at least one of the signal lines formed in a lower wiring layer of the at least two wiring layers is electrically connected to the gate electrode opposed in a stacking direction.

REFERENCES:
patent: 7550850 (2009-06-01), Nakashiba
patent: 7667279 (2010-02-01), Nakashiba
patent: 2004/0150070 (2004-08-01), Okada et al.
patent: 2007/0057280 (2007-03-01), Hayashi et al.
patent: 2008/0129911 (2008-06-01), Huang et al.
patent: 2008/0237747 (2008-10-01), Hayashi et al.
patent: 2009/0160012 (2009-06-01), Kim
patent: 2009/0206392 (2009-08-01), Shin et al.
patent: 2009/0296477 (2009-12-01), Kim et al.
patent: 2010/0182078 (2010-07-01), Cantoni
patent: 2000-353785 (2000-12-01), None

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