Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1993-04-12
1994-08-16
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257265, 257268, 257272, 257279, H01L 2980
Patent
active
053389492
ABSTRACT:
A JFET configuration is obtained whose pinch-off voltage can be set by means of mask dimensions, without process changes, and which is at the same time suitable for operation at very low and very high voltages by cascoding of a first JFET with a diffused or implanted channel which is pinched off in lateral direction, parallel to the surface of the semiconductor body, with a second JFET with a high breakdown voltage and a higher pinch-off voltage than the first JFET. To increase the breakdown voltage still further, the combination of the first and second JFET may be further cascoded, without process changes, with a third JFET which has a channel of the conductivity type opposite to that of the first and second JFET.
REFERENCES:
patent: 3450963 (1969-06-01), Tsai
patent: 3967305 (1976-06-01), Zuleeg
patent: 4205334 (1980-05-01), Nonaka et al.
patent: 4219828 (1980-08-01), Lardy
patent: 4516037 (1985-05-01), Shackle
patent: 4816881 (1989-03-01), Boos et al.
patent: 4937517 (1990-06-01), Kurashima
patent: 4951114 (1990-08-01), Lewis
Biren Steven R.
Crane Sara W.
Meier Stephen D.
U.S. Philips Corporation
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