Semiconductor device having SEPP connected NPN and PNP transisto

Details Semiconductor device having SEPP connected NPN and PNP transisto Semiconductor device having SEPP connected NPN and PNP transisto

1997-05-21

2000-04-25

Mottola, Steven J.

Amplifiers

With semiconductor amplifying device

Including push-pull amplifier

330267, H03F 326

Patent

active

060548983

ABSTRACT:
A semiconductor device capable of maintaining good temperature compensation and reducing manufacture costs of SEPP connecting NPN and PNP power transistors and temperature compensating and biasing circuits. A first semiconductor device has an ordinary bias diode formed on the same semiconductor substrate as an NPN power transistor. A second semiconductor device has one or a plurality of Schottky barrier type diodes formed on the same semiconductor substrate as a PNP power transistor. The forward voltage drop V.sub.1 of the diode is set to an arbitrary constant value smaller than E exclusive of about E/2, and the total forward voltage drop V.sub.2 of the Schottky barrier diode or diodes is set to a predetermined value of about (E-V.sub.1), where E is a total forward voltage drop between the bases and emitters of the NPN and PNP power transistors.

REFERENCES:
patent: 4523154 (1985-06-01), Congdon
patent: 5337012 (1994-08-01), Dijkmans

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