Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Patent
1998-06-26
2000-06-27
Williams, Alexander Oscar
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
257724, 257778, 257777, 257531, H01L 2334
Patent
active
060810300
ABSTRACT:
A semiconductor device having separated exchange mechanism comprises a chip forming an integrated circuit; a connection substrate; device connection points or balls; and at least one exchange mechanism. The connection substrate comprises an external connection mechanism. The device connection points or balls are distributed in the form of a matrix and are located between the juxtaposed faces of the chip and of the connection substrate. The device connection points are connected to the external connection mechanism. The exchange mechanism comprises two parts. The two parts are arranged so as to be separated from each other and capable of exchanging signals between each other, in one or both directions. The first part is physically coupled to the chip. The second part is physically coupled to the connection substrate and is connected to the external connection mechanism.
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Jaouen Herve
Marty Michel
Galanthay Theodore E.
STMicroelectronics S.A.
Williams Alexander Oscar
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