Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2006-12-07
2008-11-25
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257S706000, C257S707000
Reexamination Certificate
active
07456492
ABSTRACT:
A semiconductor device includes: first and second metal electrodes having inner surfaces facing each other; a semiconductor element sandwiched between the electrodes; and first and second insulation substrates disposed on the electrode and opposite to the semiconductor element, respectively. Each of the insulation substrates is made of ceramics. At least one of the electrodes includes a plurality of layers stacked in a direction parallel to a stacking direction. One layer disposed on a semiconductor element side has a thermal expansion coefficient, which is higher than that of another layer disposed on an insulation substrate side.
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Office Action dated Feb. 27, 2008 in corresponding German Patent Application No. 10 2006 059 501.7-33 (and English translation).
Dang Phuc T
DENSO CORPORATION
Posz Law Group , PLC
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