Semiconductor device having self-aligned contacts

Details Semiconductor device having self-aligned contacts Semiconductor device having self-aligned contacts

1996-07-26

2000-07-11

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257640, 257760, 257296, H01L 2348

Patent

active

060877103

ABSTRACT:
In a peripheral circuit region requiring a conductive path between layers at the periphery of a memory cell array region, a conductive path is provided, after removing a silicon nitride film used for self-alignment contact from the area of the contacting portion of a conductor, by forming an interlayer oxide film on the conductor and providing an opening through the interlayer oxide film. Alternatively, a conductive path is provided, after forming the interlayer oxide film on the silicon nitride film used for self-alignment contact, by forming an opening throughout the interlayer oxide film and silicon nitride film.

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K.H. Kusters et al., "A High Density 4Mbit dram Process Using a Fully Overlapping Bitline Contact (FOBIC) Trench Cell." 93-94.

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