Semiconductor device having sealing structure for wide gap...

Details Semiconductor device having sealing structure for wide gap... Semiconductor device having sealing structure for wide gap...

2006-03-14

2006-03-14

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Beam leads

C257S744000, C257S734000, C257S743000

Reexamination Certificate

active

07012332

ABSTRACT:
A semiconductor chip and connection ends of corresponding external electrode terminals are encapsulated with a glass based sealing material, and the semiconductor chip includes a wide gap semiconductor element, and the electrodes of the semiconductor chip are connected to the end portions of the external electrode terminals by a silver based brazing member and/or pressure contact.

REFERENCES:
patent: 6140906 (2000-10-01), Kaihara et al.
patent: 2004/0027502 (2004-02-01), Tanaka
patent: 62-205635 (1987-09-01), None
patent: 64-65870 (1989-03-01), None
patent: 5-144853 (1993-06-01), None
patent: 8-102553 (1996-04-01), None
patent: 2000-106444 (2000-04-01), None
patent: 2001-24004 (2001-01-01), None

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