Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor
Reexamination Certificate
2006-07-04
2006-07-04
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
To compound semiconductor
C257S486000, C257S485000
Reexamination Certificate
active
07071526
ABSTRACT:
A GaN semiconductor device with improved heat resistance of the Schottky junction electrode and excellent power performance and reliability is provided. In this semiconductor device having a Schottky gate electrode17which is in contact with an AlGaN electron supplying layer14, a gate electrode17comprises a laminated structure wherein a first metal layer171formed of any of Ni, Pt and Pd, a second metal layer172formed of any of Mo, Pt, W, Ti, Ta, MoSi, PtSi, WSi, TiSi, TaSi, MoN, WN, TiN and TaN, and a third metal layer formed of any of Au, Cu, Al and Pt. Since the second metal layer comprises a metal material having a high melting point, it works as a barrier to the interdiffusion between the first metal layer and the third metal layer, and the deterioration of the gate characteristics caused by high temperature operation is suppressed. Since the first metal layer contacting the AlGaN electron supplying layer14has a high work function, the Schottky barrier is high, and superior Schottky contact is obtained.
REFERENCES:
patent: 4951121 (1990-08-01), Furukawa et al.
patent: 6521998 (2003-02-01), Teraguchi et al.
patent: 2003/0107065 (2003-06-01), Taniguchi et al.
patent: 2003/0109088 (2003-06-01), Nishii et al.
patent: 11-354817 (1999-12-01), None
patent: 2000-277724 (2000-10-01), None
patent: 2001-156081 (2001-06-01), None
Kim et al., “High-temperature structural behavior of Ni/Au Contact on GaN(0001)”, MRS Internet Journal: Nitride Semiconductor Research, Feb. 15, 2001.
T. Egawa, et al.; “Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire”; Appl. Phys. Lett., Jan. 3, 2000; vol. 76(1); pp. 121-123.
Egawa, Takashi, et al.; “Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition”; Jpn. J. Appl. Phys.; Apr. 1999; vol. 38; Part 1; No. 4B; pp. 2630-2633.
Ando Yuji
Kasahara Kensuke
Kuzuhara Masaaki
Miyamoto Hironobu
Nakayama Tatsuo
Dickstein Shapiro Morin & Oshinsky LLP.
Landau Matthew C
NEC Corporation
Parker Kenneth
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