Semiconductor device manufacturing: process – Forming schottky junction – Compound semiconductor
Reexamination Certificate
2011-01-25
2011-01-25
Andújar, Leonardo (Department: 2826)
Semiconductor device manufacturing: process
Forming schottky junction
Compound semiconductor
C438S570000, C438S571000, C438S167000, C438S172000, C257S192000, C257S194000
Reexamination Certificate
active
07875538
ABSTRACT:
A semiconductor device includes: a nitride semiconductor layer including a channel layer, a Schottky electrode that contacts the nitride semiconductor layer and contains indium, and an ohmic electrode that contacts the channel layer. The nitride semiconductor layer includes a layer that contacts the Schottky electrode and contains AlGaN, InAlGaN or GaN. The Schottky electrode that contains indium includes one of an indium oxide layer and an indium tin oxide layer.
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Andújar Leonardo
Eudyna Devices Inc.
Harriston William
Westerman Hattori Daniels & Adrian LLP
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