Semiconductor device having salicide structure, method of manufa

Details Semiconductor device having salicide structure, method of manufa Semiconductor device having salicide structure, method of manufa

1991-09-06

1992-11-10

Quach, T. N.

Fishing, trapping, and vermin destroying

437 41, 437160, 437248, 437 22, 148DIG19, H01L 21283, H01L 2122

Patent

active

051622637

ABSTRACT:
A semiconductor device comprises a semiconductor substrate of a first conductivity type. An insulative film and metal films are sequentially formed on the main top surface of the semiconductor substrate. Impurity diffusion layers of a second conductivity type are selectively formed on the main top surface of the semiconductor substrate. The semiconductor device further comprises metal compound layers consisting of constituting elements of the semiconductor substrate and a metal element. The metal compound layers are formed in the impurity diffusion layers in such a manner that they do not contact the insulative film, and the metal compound layers on the main back surface side of the semiconductor substrate have faces formed in parallel to the top surface of the semiconductor substrate. The method also includes cooling the top of the substrate to form a temperature gradient that results in increased dopant concentration at the bottom of a silicide layer.

REFERENCES:
patent: 4551908 (1985-11-01), Nagasawa et al.
patent: 4558507 (1985-12-01), Okabayashi et al.
patent: 4622735 (1986-11-01), Shibata
patent: 4774204 (1988-09-01), Havemann
patent: 4788160 (1988-11-01), Havemann et al.
patent: 4999320 (1991-03-01), Douglas

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