Semiconductor device having ring-shaped conductive spacer which

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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438666, 438629, 257774, H01L 2352

Patent

active

059295244

ABSTRACT:
The present invention relates to a multilayer wiring structure for a semiconductor device which can be designed without sacrificing either a micronization or electric properties, and a manufacturing method of the same.
A first wiring layer and a third wiring layer are connected by a lower layer contact plug which fills a lower layer contact hole interposing a silicon nitride film spacer, and an upper layer contact plug which fills an upper layer contact hole interposing a silicon oxide film spacer. A second wiring layer divided into more than two portions by the upper layer contact hole near an upper end of the lower layer contact hole is connected by a ring-shaped conductive film spacer.

REFERENCES:
patent: 4866009 (1989-09-01), Matsuda
patent: 5173442 (1992-12-01), Carey
patent: 5318925 (1994-06-01), Kim
patent: 5358903 (1994-10-01), Kim
patent: 5439848 (1995-08-01), Hsu et al.
patent: 5571751 (1996-11-01), Chung
patent: 5614765 (1997-03-01), Avanzino et al.
patent: 5658830 (1997-08-01), Jeng

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