Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-12-04
1999-07-27
Everhart, Caridad
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
438666, 438629, 257774, H01L 2352
Patent
active
059295244
ABSTRACT:
The present invention relates to a multilayer wiring structure for a semiconductor device which can be designed without sacrificing either a micronization or electric properties, and a manufacturing method of the same.
A first wiring layer and a third wiring layer are connected by a lower layer contact plug which fills a lower layer contact hole interposing a silicon nitride film spacer, and an upper layer contact plug which fills an upper layer contact hole interposing a silicon oxide film spacer. A second wiring layer divided into more than two portions by the upper layer contact hole near an upper end of the lower layer contact hole is connected by a ring-shaped conductive film spacer.
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patent: 5571751 (1996-11-01), Chung
patent: 5614765 (1997-03-01), Avanzino et al.
patent: 5658830 (1997-08-01), Jeng
Drynan John Mark
Koyama Kuniaki
Everhart Caridad
NEC Corporation
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