Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-01-04
2005-01-04
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S538000, C257S349000, C257S401000, C257S363000, C257S364000
Reexamination Certificate
active
06838747
ABSTRACT:
A dopant is ion-implanted into a second region (52) of a polycrystalline silicon film (50) for a resistive element (5). Nitrogen or the like is ion-implanted into a second region (62) of a polycrystalline silicon film (60) for a resistive element (6). The density of crystal defects in the second regions (52, 62) is higher than that in first regions (51, 61). The density of crystal defects in a polycrystalline silicon film (70) for a resistive element (7) is higher near a silicide film (73). A polycrystalline silicon film (80) for a resistive element (8) is in contact with a substrate (2) with a silicide film in an opening of an isolation insulating film (3). The density of crystal defects in a substrate surface (2S) near the silicide film is higher than that in the vicinity. With such a structure, a current leak in an isolation region can be reduced.
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S. M. Sze, “Physics of Semiconductor Devices,” John Wiley & Sons, New York, (1981), p. 21.
Lee Eddie
Magee Thomas
Renesas Technology Corp.
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