Semiconductor device having registration mark for electron beam

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – Frequency of cyclic current or voltage

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357 85, 357 45, 357 68, 357 71, 324158T, 427 431, 430 22, H01L 4902, H01L 2166

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active

046426728

ABSTRACT:
This invention relates to a structure of a registration mark for electron beam exposure technique. The mark comprises a lower metal film formed on a semiconductor substrate such as GaAs substrate having high electrical resistivity, and a upper metal film formed on the lower metal film and having a raised or indented crisscross shape. A connecting portion is connected electrically to the lower metal film and extends on the substrate. According to this structure, charge that has been built up in the registration mark by many scanning actions can be discharged through the connecting portion and hence, accurate registration is possible.

REFERENCES:
patent: 3445727 (1969-05-01), Maple
patent: 3480412 (1969-11-01), Duffek et al.
patent: 4323638 (1982-04-01), Adams et al.
patent: 4356223 (1982-10-01), Iida et al.
patent: 4407933 (1983-10-01), Fraser et al.
patent: 4467400 (1984-08-01), Stopper
Conf. IEDM, Wash. D.C., 7-9 Dec. 1981, "Observation of . . . GaAs", Milano et al, pp. 626-628.

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