Semiconductor device having redundant circuit

Details Semiconductor device having redundant circuit Semiconductor device having redundant circuit

1994-12-13

1996-11-26

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257209, 257356, H01L 2710, H01L 2362, H01L 2900

Patent

active

055788610

ABSTRACT:
In a semiconductor device, a connection conductive layer is formed by patterning on a p-type semiconductor substrate. A silicon nitride film is formed on the connection conductive layer with an insulating layer. A silicon oxide film is formed on the silicon nitride film. The silicon oxide film is provided with a hole. The silicon nitride film is exposed at a bottom of the hole. The hole is located immediately above the connection conductive layer. Thereby, a thickness of the insulating layer on a fuse element which can be blown can be controlled easily in the semiconductor device.

REFERENCES:
patent: 5444012 (1995-08-01), Yoshizumi et al.

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