Semiconductor device having reduced surface leakage and methods

Details Semiconductor device having reduced surface leakage and methods Semiconductor device having reduced surface leakage and methods

1975-09-19

1977-09-13

Rutledge, L. Dewayne

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

148 15, 148187, 148188, 357 23, 357 52, 427 85, 427 95, H01L 21283, H01L 21461

Patent

active

040483509

ABSTRACT:
Surface leakage paths on bipolar and FET transistors may be significantly reduced by the presence of a fixed charge in an insulating layer adhered to a semiconductor wafer. The fixed charge consists of ions which are introduced into the insulating layer after all high-temperature process treatments have been performed on the wafer. The ions are introduced into the insulating layer by (1) immersing the wafer in a solution of a suitable metal salt; (2) sandwiching the wafers between carefully cleaned non-immersed wafers and (3) driving the ions to the insulating layer-wafer interface by heating the wafer stacks in a furnace at a preselected temperature. The effective charge level embedded in the insulating layer is sufficient to protect against inversion of the wafer surface due to conductors on the insulating layer having negative potentials exceeding 10 volts and overlying the stored-charge area.

REFERENCES:
patent: 3084079 (1963-04-01), Harrington
patent: 3183130 (1965-05-01), Reynolds et al.
patent: 3328210 (1967-06-01), McCaldin et al.
patent: 3402081 (1968-09-01), Lehman
patent: 3442721 (1969-05-01), McCaldin et al.
patent: 3514348 (1970-05-01), Ku
patent: 3541676 (1970-11-01), Brown
patent: 3767483 (1974-09-01), Toykuyama et al.
patent: 3787251 (1974-01-01), Brand et al.
patent: 3834939 (1974-09-01), Beyer et al.

Affiliated with

Also associated with

Rating

Semiconductor device having reduced surface leakage and methods does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having reduced surface leakage and methods , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having reduced surface leakage and methods will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-274930